On Topological Analysis of Entropy Measures for Silicon Carbides Networks

Simple item page
dc.contributor.authorWang, X.L.
dc.contributor.authorSiddiqui, M.K.
dc.contributor.authorKirmani, S.A.K.
dc.contributor.authorManzoor, S.
dc.contributor.authorAhmad, S.
dc.contributor.authorDhlamini, M.
dc.date.accessioned2025-05-28T14:18:43Z
dc.date.available2025-05-28T14:18:43Z
dc.date.issued2021-11-05
dc.description.abstractThe silicon material has provoked and stimulated significant research concern to a considerable extent taking into account its marvelous mechanical, optical, and electronic properties. Naturally, silicons are semiconductors and are utilized in the formation of various materials. For example, it is used in assembling the electronic based gadgets. In this article, we have studied the 2D structure of silicon carbide Si2C3 − I[m, n] and Si2C3 − II[m, n] and then continued to discuss some degree grounded topological descriptors in association with their corresponding entropy measures. We extend this computation to the quantitative and pictorial comparisons which could be beneficial in the structure amendment for effective implementation.
dc.identifier.citationWang, X.L., Siddiqui, M.K., Kirmani, S.A.K., Manzoor, S., Ahmad, S. and Dhlamini, M., 2021. On topological analysis of entropy measures for silicon carbides networks. Complexity, 2021(1), p.4178503.
dc.identifier.urihttp://196.220.97.103:4000/handle/123456789/704
dc.language.isoen
dc.publisherWiley
dc.titleOn Topological Analysis of Entropy Measures for Silicon Carbides Networks
dc.typeArticle
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Complexity - 2021 - Wang - On Topological Analysis of Entropy Measures for Silicon Carbides Networks.pdf
Size:
10.34 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download
Collections
Applied Mathematics Publications